APTC80H29T3G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

APTC80H29T3G

Description:

MOSFET 4N-CH 800V 15A SP3

Stock:

25686

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$9.9

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Parameters

Current at 25 ° C - continuous drain (Id)

15A

Drain source voltage (Vdss)

800V

FET Type

4 N channels(H )

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

90nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

2254pF @ 25V

On resistance (maximum) for different Ids and Vgs

290 mΩ @ 7.5A,10V

Power - maximum

156W

Vgs (th) (maximum) for different Ids

3.9V @ 1mA

packing

bulk

series

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP3

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

APTC80H29T3G（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25686,Price reference "real-time change" China/Hongkong。 APTC80H29T3G package/specs, Download APTC80H29T3G、Datasheet。